小體積高精密的CMOS振蕩器X1G005601004300，隨著5G通信，智能家居，物聯(lián)網(wǎng)等產(chǎn)品的快速發(fā)展，未來(lái)的晶振產(chǎn)品將會(huì)發(fā)生非常大的變化，而未來(lái)有源晶振會(huì)成為主流產(chǎn)品，當(dāng)然，離不開(kāi)其獨(dú)特的性能，以及超高的可靠性能和耐壓性能等特點(diǎn)，高科技的產(chǎn)品引領(lǐng)著世界的發(fā)展趨勢(shì)，從而也使得晶振產(chǎn)品出現(xiàn)了非常大的進(jìn)步，市場(chǎng)不斷淘汰掉舊的產(chǎn)品，或是不斷優(yōu)化產(chǎn)品的性能，石英晶體振蕩器的主要特性之一是工作溫度內(nèi)的穩(wěn)定性，它是決定振蕩器價(jià)格的重要因素。穩(wěn)定性愈高或溫度范圍愈寬，器件的價(jià)格亦愈高。工業(yè)級(jí)標(biāo)準(zhǔn)規(guī)定的-40～+75℃這個(gè)范圍往往只是出于設(shè)計(jì)者們的習(xí)慣，倘若-30～+70℃已經(jīng)夠用，那么就不必去追求更寬的溫度范圍。

Product Number	進(jìn)口晶振型號(hào)	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005601002500	SG-8018CG	12.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601002600	SG-8018CG	12.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601002700	SG-8018CG	10.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601002800	SG-8018CG	10.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601002900	SG-8018CG	27.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601003000	SG-8018CG	27.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601003100	SG-8018CG	32.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601003200	SG-8018CG	32.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601003300	SG-8018CG	8.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601003400	SG-8018CG	8.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601003500	SG-8018CG	14.745600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601003600	SG-8018CG	14.745600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601003700	SG-8018CG	12.288000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601003800	SG-8018CG	12.288000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601003900	SG-8018CG	33.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601004000	SG-8018CG	33.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601004100	SG-8018CG	30.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601004200	SG-8018CG	30.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601004300	SG-8018CG	26.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601004400	SG-8018CG	26.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601004500	SG-8018CG	24.576000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601004600	SG-8018CG	24.576000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA

設(shè)計(jì)工程師要慎密決定特定應(yīng)用的實(shí)際需要，然后規(guī)定有源晶體振蕩器的穩(wěn)定度。指標(biāo)過(guò)高意味著花錢(qián)愈多。晶體老化是造成頻率變化的又一重要因素。根據(jù)目標(biāo)產(chǎn)品的預(yù)期壽命不同，有多種方法可以減弱這種影響。晶體老化會(huì)使輸出頻率按照對(duì)數(shù)曲線發(fā)生變化，也就是說(shuō)在產(chǎn)品使用的第一年，這種現(xiàn)象才最為顯著。例如，使用10年以上的晶體，其老化速度大約是第一年的3倍。采用特殊的晶體加工工藝可以改善這種情況，也可以采用調(diào)節(jié)的辦法解決，比如，可以在控制引腳上施加電壓(即增加電壓控制功能)等。

Product Number	進(jìn)口晶振型號(hào)	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005601004700	SG-8018CG	100.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.9 mA
X1G005601004800	SG-8018CG	100.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.9 mA
X1G005601004900	SG-8018CG	4.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601005000	SG-8018CG	4.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601005100	SG-8018CG	66.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601005200	SG-8018CG	66.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601005300	SG-8018CG	19.660800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601005400	SG-8018CG	19.660800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601005500	SG-8018CG	125.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 6.7 mA
X1G005601005600	SG-8018CG	125.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 6.7 mA
X1G005601005700	SG-8018CG	33.333300 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601005800	SG-8018CG	33.333300 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601005900	SG-8018CG	96.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.9 mA
X1G005601006000	SG-8018CG	48.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601006100	SG-8018CG	13.516800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601006200	SG-8018CG	64.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601006300	SG-8018CG	13.107200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601006400	SG-8018CG	12.500000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601006500	SG-8018CG	80.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.9 mA
X1G005601006600	SG-8018CG	16.384000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA

小體積高精密的CMOS振蕩器X1G005601004300，與穩(wěn)定度有關(guān)的其他因素還包括電源電壓、負(fù)載變化、相位噪聲和抖動(dòng)，這些指標(biāo)應(yīng)該規(guī)定出來(lái)。對(duì)于工業(yè)產(chǎn)品，有時(shí)還需要提出振動(dòng)、沖擊方面的指標(biāo)，軍用品和宇航設(shè)備的要求往往更多，比如壓力變化時(shí)的容差、受輻射時(shí)的容差，等等。

愛(ài)普生晶振公司憑借著自身獨(dú)特的見(jiàn)解，研發(fā)設(shè)計(jì)生產(chǎn)出了SG-8018CG有源晶振，SPXO振蕩器，編碼X1G005601004300，頻率26.000000兆赫，輸出WaveCMOS，供電電壓1.62至3.63 V，尺寸(長(zhǎng)×寬×高)2.50 × 2.00 × 0.80毫米，工作溫度-40到+105°C，頻率公差±50ppm，額外的OptionsN /，OSC TypeProgrammable Clock時(shí)鐘OSC，具有更廣泛的工作溫度范圍，最高極限為105°C。除了2.5 × 2.0 mm的封裝，將使電子制造商節(jié)省板空間，該振蕩器也將在以下流行的封裝尺寸:3.2 × 2.5 mm, 5.0 × 3.2 mm和7.0 × 5.0 mm。SG-8018系列振蕩器的頻率容忍度約為66%比同類(lèi)產(chǎn)品低50%的電流消耗，適用范圍廣環(huán)境條件。這也將大大有助于性能，更低的功率要求，快速開(kāi)發(fā)周期和低量生產(chǎn)。